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| UTC US104S/N SCRs DESCRIPTION Thanks to highly sensitive triggering levels, the UTC US104S is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, overvoltage crowbar protection for low power supplies, ... Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area. SCR SYMBOL A K 1 G TO-220 1: CATHODE 2: ANODE 3: GATE ABSOLUTE RATINGS PARAMETER Repetitive peak off-state voltages and Repetitive peak reverse voltage US104S/N-4 US104S/N-6 US104S/N-8 RMS on-state current (180 conduction angle) (Tc = 115C) Average on-state current (180 conduction angle) (Tc = 115C) Non repetitive surge peak on-state current (Tj = 25C) tp=8.3ms tp=10ms It Value for fusing (tp = 10 ms, Tj = 25C) Critical rate of rise of on-state current (IG = 2 x IGT , tr 100 n s, F= 60 Hz ,Tj = 125C) Peak gate current (tp=20s, Tj = 125C) Average gate power dissipation (Tj = 125C) Storage junction temperature range Operating junction temperature range SYMBOL VDRM, VRRM IT(RMS) IT(AV) ITSM It dI/dt IGM PG(AV) Tstg Tj RATING 400 600 800 4 2.5 33 30 4.5 50 1.2 0.2 -40 ~ +150 -40 ~ +125 UNIT V A A A AS A/s A W C C UTC US104S(SENSITIVE) ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified) PARAMETER Gate trigger Current Gate trigger Voltage Gate non-trigger voltage Reverse gate voltage Holding Current SYMBOL IGT VGT VGD VRG IH TEST CONDITIONS VD = 12 V, RL =33 VD = 12 V, RL=33 MIN MAX. 200 0.8 UNIT A V V VD = VDRM, RL = 3.3 k, RGK = 220 Tj = 125C IRG = 10 A IT = 50 mA, RGK = 1 k 0.1 8 5 V mA UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R301-011,C UTC US104S/N PARAMETER Latching Current Circuit Rate Of Change Of off-state Voltage On-state voltage SCR TEST CONDITIONS IG = 1 mA ,RGK = 1 k SYMBOL IL dV/dt VTM Vt0 Rd IDRM IRRM MIN 5 MAX. 6 UNIT mA V/s VD = 67 % VDRM ,RGK = 220 Tj = 125C ITM = 8 A, tp = 380 s Tj = 25C Tj = 125C Tj = 125C 1.6 0.85 90 5 1 V V m A mA Threshold Voltage Dynamic Resistance Off-state Leakage Current VDRM = VRRM, RGK = 220 Tj = 25C VDRM = VRRM, RGK = 220 Tj = 125C UTC US104N(STANDARD) ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified) PARAMETER Gate trigger Current Gate trigger Voltage Gate non-trigger voltage Holding Current Latching Current Circuit Rate Of Change Of off-state Voltage On-state voltage SYMBOL IGT VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM TEST CONDITIONS VD = 12 V, RL =33 VD = 12 V, RL=33 MIN 2 MAX. 15 1.3 UNIT mA V V VD = VDRM, RL = 3.3 k, Tj = 125C IT = 100 mA, Gate open IG = 1.2 IGT 0.2 30 60 100 1.6 0.85 62 5 2 mA mA V/s V V m A mA VD = 67 % VDRM , Gate open,Tj = 125C ITM =8A, tp = 380 s, Tj = 25C Tj = 125C Tj = 125C Threshold Voltage Dynamic Resistance Off-state Leakage Current VDRM = VRRM Tj = 25C Tj = 125C THERMAL RESISTANCES PARAMETER Junction to case (DC) Junction to ambient (DC) SYMBOL VALUE 3.0 60 UNIT Rth(j-c) Rth(j-a) K/W K/W UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R301-011,C UTC US104S/N Fig.1:Maximum average power dissipation vs average on-state current P/W 5.0 4.5 4.0 3.5 3.0 2.5 IT(av)(A) SCR Figure.2:Average and D.C. on-state current vs case temperature 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 IT(av)(A) 1.5 2.0 2.5 3.0 360 =180 DC =180 2.0 1.5 1.0 0.5 0.0 0 25 Tcase() 50 75 100 125 Figure.3:Relative variation of gate trigger current and holding current vs junction temperature. 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 1 IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25) 5 Figure.4:Relative variation of holding current vs gate-cathode vesistance(typical values). IH(Rgk)/IH(Rgk=1k) Tj=25 IGT IH&IL Rgk=1k 4 3 2 Tj() 40 60 80 100 120 140 1E-2 0 Rgk(k) 1E-1 1E+0 1E+1 Fig.5: Relative variation of dV/dt immunity vs gatecathode resistance(typical values). dV/dt(Rgk)/dV/dt(Rgk=220) 10.00 Fig.6: Relative variation of dV/dt immunity vs gatecathode resistance(typical values). 10 dV/dt(Cgk)/dV/dt(Rgk=220) Tj=125 VD=0.67* VDRM Tj=125 VD=0.67* VDRM 8 Rgk=220 1.00 6 4 0.10 2 0.01 0 Rgk() 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Cgk(nF) 0 0 2 4 6 8 10 12 14 16 18 20 22 UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R301-011,C UTC US104S/N Figure.7: Surge peak on-state current vs number of cycles. 35 30 25 20 15 10 5 ITSM(A) SCR Fig.8:Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding values of 2 t. I ITSM(A),I t(A s) 300 tp=10ms 2 2 Tjinitial=25 dI/dt limitation ITSM Non repetitive Tj initial=25 One cycle 100 Repetitive Tcase=115 10 It 1 0.01 100 1000 tp(ms) 0.10 1.00 10.00 2 Number of cycles 0 1 10 Fig.9: On-state characteristics(maximum values). 50.0 ITSM(A) Tj=max: Vto=0.85V 10.0 Rd=90m Tj=Tjmax. 1.0 Tj=25 0.1 0.0 VTM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R301-011,C |
Price & Availability of US104S
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